| 摘要 |
PURPOSE:To provide an Au superfine sire for semiconductor element use, which improves the sphericity of a ball, which is formed at the time of ball bonding or at the time of bump bonding, in the range of a prescribed composition to improve the bonding strength of the ball at the time of thermal pressure-bonding of the ball to an electrode on a chip or an outer lead as well as to lower the height of a loop at the time of bonding and is capable of increasing the reliability and practicality of a thin semiconductor device. CONSTITUTION:An Au superfine wire for semiconductor element use is obtained by a method wherein 5 to 12wt ppm of Ca, 4 to 16wt ppm of Y and 3 to 13wt ppm of La are doped to an inevitable impurity-containing high-purity Au film within the range of the total amount of 15 to 30wt ppm. |
