CARBONIZED SILICON METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A carbonized silicon MOS(Metal Oxide Semiconductor) FET(Field Effect Transistor) is provided to obtain a breakdown voltage in a forward breakdown mode which is almost similar to a breakdown voltage of a bulk semiconductor. CONSTITUTION: The carbonized silicon MOSFET comprises: an U-shaped gate transistor; N-type carbonized silicon layer; a bulk mono crystal carbonized silicon substrate of N-type conductivity; a first epitaxial layer of N-type conductive carbonized silicon; a second epitaxial layer of P-type conductive carbonized silicon; a first trench extended downward through the second epitaxial layer into the first epitaxial layer; a second trench adjacent to the first trench extended downward through the second epitaxial layer into the first epitaxial layer; an N-type conductive carbonized silicon region which is formed between the first and the second trenches and has an upper surface in an opposite region of the second epitaxial layer; a P-type carbonized silicon region formed in the first epitaxial layer under the second trench; a gate and a source contacts formed inside the first and the second trenches respectively; and a drain contact formed on the substrate.