| 摘要 |
PURPOSE: A semiconductor device is provided to eliminate a deterioration of an electric characteristic of a ferroelectric film by preventing a surface of the ferroelectric film from being damaged by a plasma at forming a side wall. CONSTITUTION: In the semiconductor device, after forming an access transistor(2), a bit line(6) and a first interlayer insulator(4) on a semiconductor substrate(1), a plug(8) for connecting the access transistor(2) and a ferroelectric capacitor(9) is formed at a contact hole which is formed at a region of the first interlayer insulator(4). And, a lower electrode(10) consisting of a multi-layer metal film, a ferroelectric film(11) and a first upper electrode(14) are sequentially formed so as to have a desired shape. After an insulator(16) for a side wall(16S) consisting of a silicon oxide is formed on an entire surface of the substrate, an entire surface of the insulator(16) is anisotropy-etched in order to form a side wall(16S).
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