APPARATUS AND METHOD FOR HEAT-TREATING SEMICONDUCTOR WAFER

摘要

PURPOSE: An apparatus and method for homogeneously heat-treating at least two semiconductor wafer simultaneously by using a upper and lower heat source within process chamber is disclosed. CONSTITUTION: The apparatus comprise a support frame having a plurality of supports with fixed spacing and a plurality of bars facing to inside. The heat-treating is performed in at least two semiconductor wafer having identical geometry dimensions and heat material characteristics. Also, the heat-treating is achieved by using a main energy source or a secondary energy source. The semiconductor wafer has a fixed spacing of 1-30mm. The apparatus consists of heat resisting materials which pollute no the semiconductor wafer. Thereby, at least two semiconductor wafer can be simultaneously heat-treated, so that the heat-treating capacity can be increased.