| 摘要 |
PURPOSE: A substrate processing apparatus is provided to prevent a change of a resist film thickness according to the increase of a size of a heating and cooling apparatus due to the increase of a diameter of a wafer. CONSTITUTION: The apparatus comprises a resist coating unit (23, 24) for coating a resist solution on a substrate, a developing unit (33, 34) for supplying a developing solution to the substrate, a plurality of cooling units for cooling the substrate, a plurality of heating units for heating the substrate and a conveying unit (11) for conveying the substrate. The cooling units are stacked into multi-steps and comprised a cooling system and the heating units are stacked into multi-steps and comprised a heating system. The cooling system is arranged adjacent to the resist coating unit and the heating system is arranged adjacent to the developing unit. The conveying unit is placed between the resist coating unit and the developing unit. Thereby, since the heating units are apart from the resist unit, the heat generated from the heating system do not have an influence on the resist coating. |
