DOUBLE POLY-SILICON STRUCTURE IN INTEGRATED CIRCUIT AND MANUFACTURING METHODE THEREOF

摘要

PURPOSE: A double poly-silicon structure in IC and a manufacturing method thereof is provided to realize a structure of a uniform shape by forming trenches having different depth. CONSTITUTION: A double poly-silicon structure comprises the steps of: forming a first insulated layer(10); forming a first trench(14) and a second trench(20) having different depth in the first insulated layer(10); forming a poly-silicon material(40) to the first trench and the second trench; forming a second insulated layer(24) to the first trench and the second trench; and preventing the penetration of implanted ions to the second insulated layer by forming an implantation barrier(30) to the first trench and the second trench.