SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device fabricating method is provided to form a diameter of a resist hole pattern or a division width of a resist line pattern finely. CONSTITUTION: The semiconductor device fabricating method comprises the steps of: forming a hole pattern or a division pattern of a first resist (2) which is capable of supplying an acid on a semiconductor substrate (1); forming a bridging film (an organic frame) (7) at a side wall of the pattern of the first resist to reduce the hole diameter of the resist pattern or the division width of the resist pattern; reducing the division width by use of a thermal reflow phenomenon of the bridging film (7); and etching the semiconductor substrate (1) by use of the resist pattern as a mask.