| 摘要 |
PURPOSE: An indium tin oxide (In2O3-SnO2, ITO) etching composition is provided, which the stability of the etching solution is improved, the frequency of the generation of fume is reduced, and the side etching is minimized. CONSTITUTION: The ITO etching composition comprises a solution of oxalic acid and its salt in a range of 1.5 g per 1 L to the saturation concentration at the temperature using the solution. The salt is preferably ammonium oxalate. The composition can further include persulfates such as ammonium persulfate, sodium persulfate and potassium persulfate in amount of 1-250 g per 1 L, and/or a surfactant such as sodium dihexylsulfonate in amount of 0.1-20 g per 1 L. Also the ITO etching composition comprises a solution of aluminium chloride in a range of 5.5 wt% to the saturation concentration at the temperature using the solution, and a surfactant in amount of 0.1-20 g per 1 L or a reducing agent such as L-ascorbic acid in amount of 0.5-100 g per 1 L. This composition can further include persulfates in amount of 1-250 g per 1 L. |
