| 摘要 |
PURPOSE: A semiconductor device fabricating method is provided to hydrogenate a semiconductor film without the damage of a substrate which has a low heat-persistence temperature. CONSTITUTION: In the method for fabricating a thin film transistor having a polycrystalline silicon film as an active region, an amorphous silicon film is formed, and then a polycrystalline silicon film is formed by irradiating a pulse laser beam (15) so as to crystallize a silicon film. An SiNx film is formed on an entire surface as a hydrogen-containing film after electrodes (12, 13) is formed on a source region (8) and a drain region (9). By irradiating the pulse laser beam so as to heat the SiNx film, a hydrogen in the SiNx film is diffused into the polycrystalline silicon film so as to be hydrogenated, and a trap density is increased according to a lattice grain boundary in the polycrystalline silicon film.
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