| 摘要 |
PURPOSE: A semiconductor memory device is provided, which CONSTITUTION: The semiconductor memory device comprises: two P channel transistors (QP1, QP2) and two N channel transistors (QN1, QN2). The P channel transistor (QP1) to be connected between a sub word selecting line (RA) and the P channel transistor (QP2), which a gate is connected to a main word line (MWL'). The P channel transistor (QP2) to be connected between the P channel transistor (QP1) and a sub wordline (SWL), which a gate is connected to the ground. The N channel transistor (QN1) to be connected between the sub wordline (SWL) and a sub voltage (Vnb), which a gate is connected to a sub wordline selecting line (RAB). The N channel transistor (QN2) to be connected between the sub wordline (SWL) and the sub voltage (Vnb), which a gate is connected to a main wordline (MWL). Thereby, it is possible to maintain a low maximum voltage and decrease the current consumption.
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