| 摘要 |
PURPOSE: A memory circuit for changing a boosting rate is provided, which maintains a boosting voltage for driving a word line in a suitable range to certify a reading operation. CONSTITUTION: The memory circuit for changing a boosting rate comprises: a power voltage judging transistor (50) to be set as a certain threshold voltage and be connected to an N channel transistor (51) and a P channel transistor (52); a main booster unit (60) for responding to a driving pulse (KICK) to output a boosting signal (BOOST0) and boosting a boosting voltage terminal (VPW) through a main capacitor (C0); and a sub- booster unit (61) for responding to the driving pulse (KICK) to output a boosting signal (BOOST1) and boosting the boosting voltage terminal (VPW). Thereby, it is possible to certify the normal reading operation.
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