发明名称 METHODE FOR MANUFACTURING SEMICONDUCTOR AND PROCESSING DEVICE
摘要 PURPOSE: A method for manufacturing a semiconductor and a processing device is provided to improve a finishing work by introducing a surface activation process for a finishing stone. CONSTITUTION: The method for manufacturing a semiconductor and a processing device comprises the steps of: performing a surface activation process to separate stone powder(23) on a finishing stone(16); contacting a brush(21) on the finishing stone when performing the surface activation process; performing the surface activation process of the finishing stone(16) by transferring an ultrasonic wave or a sound wave of 10 or more KHz to the finishing stone(16); and detecting a finishing state and controlling a condition of the surface activation process according to the detected value.
申请公布号 KR20000017219(A) 申请公布日期 2000.03.25
申请号 KR19990032722 申请日期 1999.08.10
申请人 HITACHI. LTD. 发明人 YAS IKAN;KATAGIRI SHOUICHI;MORIYAMA SHIGEO;KAWAMURA YOSHIO;KAWAAI RYOUSHEI;NASHIMARA SADAYUKI;SATO MASAHIKO
分类号 B24B57/02;B24B1/04;B24B37/00;B24B37/04;B24B37/12;B24B53/017;B24B53/02;B24B53/12;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B57/02
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