发明名称 |
METHODE FOR MANUFACTURING SEMICONDUCTOR AND PROCESSING DEVICE |
摘要 |
PURPOSE: A method for manufacturing a semiconductor and a processing device is provided to improve a finishing work by introducing a surface activation process for a finishing stone. CONSTITUTION: The method for manufacturing a semiconductor and a processing device comprises the steps of: performing a surface activation process to separate stone powder(23) on a finishing stone(16); contacting a brush(21) on the finishing stone when performing the surface activation process; performing the surface activation process of the finishing stone(16) by transferring an ultrasonic wave or a sound wave of 10 or more KHz to the finishing stone(16); and detecting a finishing state and controlling a condition of the surface activation process according to the detected value. |
申请公布号 |
KR20000017219(A) |
申请公布日期 |
2000.03.25 |
申请号 |
KR19990032722 |
申请日期 |
1999.08.10 |
申请人 |
HITACHI. LTD. |
发明人 |
YAS IKAN;KATAGIRI SHOUICHI;MORIYAMA SHIGEO;KAWAMURA YOSHIO;KAWAAI RYOUSHEI;NASHIMARA SADAYUKI;SATO MASAHIKO |
分类号 |
B24B57/02;B24B1/04;B24B37/00;B24B37/04;B24B37/12;B24B53/017;B24B53/02;B24B53/12;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
B24B57/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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