| 摘要 |
PURPOSE: A circuit is provided to suppress the change of detection characteristic and decrease the size of the circuit by form the detection circuit using GaAs semiconductor. CONSTITUTION: The circuit comprises a field effect transistor, a gate bias circuit(101), a capacitor, a load capacitor and a load resistor. A high frequency signal is applied to the gate of the field effect transistor. The gate bias circuit supplies a gate bias voltage to the field effect transistor. The capacitor is connected between the drain of field effect transistor and the ground. The load capacitor and the load resistor is connected in series between the source of field effect transistor and the ground. The detection circuit outputs the detection signal according to envelop of the high frequency input signal form the source of field effect transistor.
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