发明名称 LASER INTERFERENCE SYSTEM, LOCATION MEASURING APPARATUS AND METHOD, EXPOSURE APPARATUS AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: An exposure apparatus is provided to be capable of controlling a location of mask stage or a substrate stage with a high exactness when a substrate is magnified. CONSTITUTION: The exposure apparatus comprises a mask stage (4) moving a first direction to maintain a mask; a substrate stage (5) moving the first direction to maintain a substrate; and a laser interference system (1) for measuring a location of a second direction perpendicular to the first direction of one of the stages by use of a laser beam, wherein the laser beam comprises a division optical system (11) for separating the laser beam into a measure beam and a reference beam; a mobile mirror (12) for reflecting the measure beam as a mobile mirror mounted at either one of the stages; a reference mirror (13) for reflecting the reference beam, as a reference mirror formed independently with either one of the stages; a mobile device for moving the division optical system with a different velocity from the mobile velocity of either one of the stages; and a detector for detecting the reference beam reflected from the reference mirror and the measure beam reflected from the mobile mirror and obtaining a location in the first direction of either one of the stages.
申请公布号 KR20000017391(A) 申请公布日期 2000.03.25
申请号 KR19990034312 申请日期 1999.08.19
申请人 NIKON CORPORATION 发明人 SSUCHIYAMAGGODDO;HAJAMAJWUNJI
分类号 G01B9/02;H01L21/027;(IPC1-7):G01B9/02 主分类号 G01B9/02
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