| 摘要 |
PURPOSE: A semiconductor integrated circuit apparatus and manufacturing method thereof is provided, which has a static random access memory (SRAM) and a logic circuit. CONSTITUTION: The semiconductor integrated circuit apparatus comprises: logic circuits (2A-2C) such as an input/output circuit, a microprocessor (CPU); a SRAM for a cache memory having a plurality of memory cells (MC) which a 6 metal insulator semiconductor field effect transistor (MIS.FET) is arranged; a phase locked loop (PLL); and a clock pulse generator (CPG), wherein memory cells (MC) has a pair of complementary data lines (DL1, DL2), a pair of driving MIS.FET (Qd1, Qd2) to be arranged at a cross portion with a wordline (WL), a pair of load resistor MIS.FET (QL1, QL2), and a pair transmission MIS.FET (Qt1, Qt2). Thereby, it is possible to improve a static noise margin (SNM) of the SRAM. |
