发明名称 |
Plasma etching of structure with trenched of different width or depth-width ratio, where etching speed is dependent upon temperature of silicon layer |
摘要 |
Anisotropic plasma etching of structures with trenches of different width or different depth-width ratio in a silicon layer. Etching speed varies depending on trench dimensions and it is adjusted using the temperature of the silicon layer.
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申请公布号 |
DE19841964(A1) |
申请公布日期 |
2000.03.23 |
申请号 |
DE1998141964 |
申请日期 |
1998.09.14 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
BECKER, VOLKER;LAERMER, FRANZ;SCHILP, ANDREA |
分类号 |
B81C1/00;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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