| 摘要 |
<p>An operative high critical temperature superconducting (HTSC) device (20) and method therefor are provided. The HTSC device (20) includes a niobium inhibitor (24) deposited over selected regions (23) of the surface of a substrate (21). A superconducting material (25) is deposited over substantially the entire surface of the substrate (21). The superconducting material (25) possesses a high resistivity in the selected regions (23) and exhibits superconducting characteristics only in regions (22) in which the niobium inhibitor (24) has not been deposited. In accordance with the method of the present invention, the formation of the (HTSC) device includes the step of providing an atmosphere of argon and oxygen and subjecting the device to RF plasma sputtering at controlled temperature and pressure.</p> |
