发明名称 |
DEVICE AND METHOD FOR ETCHING SPACERS FORMED UPON AN INTEGRATED CIRCUIT GATE CONDUCTOR |
摘要 |
A dry etch process is presented wherein a semiconductor substrate (16) is introduced into a reaction chamber (11) between a first electrode (12) and a second electrode (14). The semiconductor substrate (16) may be positioned on the first electrode (12). A main flow of gas that includes an argon flow at an argon flow rate and a fluorocarbon flow at a fluorocarbon flow rate is established into the reaction chamber (11). RF power (22) at a low frequency may then be applied to the first electrode (12) for creating a fluorine-deficient plasma. An oxide layer (38) arranged above the semiconductor substrate (16) is exposed to the fluorine-deficient plasma for etching, in a single step, a portion of the oxide layer (38).
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申请公布号 |
WO0016389(A1) |
申请公布日期 |
2000.03.23 |
申请号 |
WO1999US05479 |
申请日期 |
1999.03.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGUYEN, THIEN, T.;GARDNER, MARK, I.;MAY, CHARLES, E. |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/336;H01L29/78;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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