发明名称 |
Producing an amorphous or polycrystalline silicon layer on an insulation region, especially for a bipolar transistor for high speed applications, uses a nucleation layer to improve nucleation |
摘要 |
Amorphous or polycrystalline silicon layer production on an insulation region (14), using a nucleation layer (28) to improve nucleation, is new. Preferred Features: The amorphous or polycrystalline layer (19) consists of silicon-germanium and the insulation region (14) consists of SiO2. The nucleation layer is a silicon nitride layer.
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申请公布号 |
DE19845792(A1) |
申请公布日期 |
2000.03.23 |
申请号 |
DE1998145792 |
申请日期 |
1998.09.21 |
申请人 |
INSTITUT FUER HALBLEITERPHYSIK FRANKFURT (ODER) GMBH |
发明人 |
TILLACK, BERND;HEINEMANN, BERND;KNOLL, DIETER;EHWALD, KARL-ERNST;WOLANSKY, DIRK |
分类号 |
H01L21/285;H01L21/20;H01L21/28;H01L21/3205;H01L21/331;H01L29/732;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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