发明名称 Producing an amorphous or polycrystalline silicon layer on an insulation region, especially for a bipolar transistor for high speed applications, uses a nucleation layer to improve nucleation
摘要 Amorphous or polycrystalline silicon layer production on an insulation region (14), using a nucleation layer (28) to improve nucleation, is new. Preferred Features: The amorphous or polycrystalline layer (19) consists of silicon-germanium and the insulation region (14) consists of SiO2. The nucleation layer is a silicon nitride layer.
申请公布号 DE19845792(A1) 申请公布日期 2000.03.23
申请号 DE1998145792 申请日期 1998.09.21
申请人 INSTITUT FUER HALBLEITERPHYSIK FRANKFURT (ODER) GMBH 发明人 TILLACK, BERND;HEINEMANN, BERND;KNOLL, DIETER;EHWALD, KARL-ERNST;WOLANSKY, DIRK
分类号 H01L21/285;H01L21/20;H01L21/28;H01L21/3205;H01L21/331;H01L29/732;(IPC1-7):H01L21/331 主分类号 H01L21/285
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