| 发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor light-emitting device has a structure where an active layer (5) which emits light when current is injected and has a composition of, e.g., CdxZn1-xO (0 </= x < 1) is sandwiched between an n-type clad layer (4) and a p-type clad layer (6) both made of materials having band gaps wider than that of the active layer (5). It is preferable that the composition of the clad layers (4, 6) is, e.g., MgyZn1-yO (0 </= y < 1). The band gap of the ZnO material is narrowed. The materials of the active layer and clad layers of a semiconductor light-emitting device such as a blue light-emitting diode or laser diode in which an active layer is sandwiched between clad layers can be an oxide semiconductor which can be wet-etched, easily handled, and excellent in crystallinity, thereby providing a blue light-emitting device excellent in light emission characteristics. |
| 申请公布号 |
WO0016411(A1) |
申请公布日期 |
2000.03.23 |
| 申请号 |
WO1999JP04903 |
申请日期 |
1999.09.09 |
| 申请人 |
ROHM CO., LTD.;TANABE, TETSUHIRO;NAKAHARA, KEN |
发明人 |
TANABE, TETSUHIRO;NAKAHARA, KEN |
| 分类号 |
H01L21/363;H01L33/06;H01L33/12;H01L33/28;H01L33/32;H01S5/02;H01S5/32;H01S5/327;H01S5/347 |
主分类号 |
H01L21/363 |
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