| 摘要 |
<p>A method for forming a compound semiconductor layer which comprises the step growing a III-V compound semiconductor crystal layer containing at least nitrogen and arsenic as V Group elements on a single crystal substrate, said step growing a III-V compound semiconductor crystal layer comprising a step supplying the single crystal substrate with a nitrogen source so that the nitrogen source can interact with aluminum at least on a surface from which the III-V compound semiconductor crystal layer grows. A process for forming a III-V compound semiconductor layer comprising a III-V compound semiconductor containing arsenic of a Group V element and nitrogen incorporated therein as a mixed crystal is thus provided.</p> |
