COMBINATORIAL MOLECULAR LAYER EPITAXY DEVICE

摘要

A combinatorial molecular layer epitaxy device comprising a pressure-controllable common chamber (22), at least one transferable substrate heating unit (36) having in the common chamber a substrate holder (48) holding at least one substrate and at least one pressure-controllable processing chamber (24, 26, 28) each corresponding to a substrate heating unit, wherein a growth chamber (24) out of processing chambers has a multiple-material supply means for supplying materials to substrates (5) held by each substrate heating unit, a gas supply means for supplying gas onto the surfaces of substrates, and an on-site observation means for observing on-site an epitaxial growth for each monolayer on a substrate surface, whereby forming each temperature-and pressure-controllable vacuum chamber by each substrate heating unit and each processing chamber.