| 摘要 |
<p>A TPV cell apparatus (1) with a base region of GaSb crystals (2). The GaSb crystals (2) are of varying orientations and joined at grain boundaries (4). A surface region is provided on the GaSb crystals (2). The GaSb crystals (2) are Tellurium doped N-type GaSb (3) and the surface region is thin Zinc doped P-type GaSb cells (5). The surface region faces an infrared source. A bus region (8) is connected to a metal grid (6) which is in contact with the surface region of the cell (1). A continuous metal layer (7) is in contact with the GaSb crystals (2). A multilayer coating (9) forms an infrared filter for transmitting convertible infrared energy to the cell (1) and for reflecting as much of non-convertible infrared energy back to the IR source as possible. A TPV generator may be provided with the TPV cells (1).</p> |
