SEMICONDUCTOR LIGHT-EMITTING DIODE

摘要

A semiconductor light emitting diode (10) is formed on an n-type GaAs substrate and includes: an AlGaInP based double heterojunction structure in which an active layer (16) is sandwiched between cladding layers (14, 18); an upper P-type contact layer 20; and a ring-shaped upper electrode (22) having an opening (28), wherein light is emitted through the upper p-type contact layer (20) and the opening (28) of the upper electrode (22). The upper p-type contact layer (20) is a semiconductor layer made of AlGaAs or AlGaAsP having an Al content of 0.5 or more, and doped with impurities at a carrier concentration of 5x10<18>cm<-3> or more. The semiconductor light emitting diode emits light in a desired emission pattern and at higher intensities, and is capable of being fabricated by relatively simple processes. <IMAGE>