| 摘要 |
<p>PCT No. PCT/DE93/01129 Sec. 371 Date Aug. 5, 1994 Sec. 102(e) Date Aug. 5, 1994 PCT Filed Nov. 27, 1993 PCT Pub. No. WO94/14187 PCT Pub. Date Jun. 23, 1994.A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.</p> |
