| 摘要 |
A method of making a DRAM comprises forming trench isolation 104 in a first semiconductor substrate to define active regions 105, forming first capacitor electrode 110, a dielectric film 112 and a second capacitor electrode 114 on the substrate, bonding the top surface of the second capacitor electrode to the surface of a second semiconductor substrate 200 via a bonding oxide layer 204, forming transistors 210 in the surface of the first semiconductor substrate and forming a bit line 214 over the first semiconductor substrate. The transistors 210 are formed by ion implantation to provide source/drain regions 208. The formation of the transistors after the capacitor in the CUB (capacitor under bit line) structure prevents degradation of the transistor characteristics.
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