| 摘要 |
PROBLEM TO BE SOLVED: To enable a nitride semiconductor laser element to have a resonance surface nearly equal to a mirror surface by a method wherein the nitride semiconductor element is cleaved making a certain plane of a gallium nitride serve as a cleaving plane to have a resonance lane like a mirror surface when the nitride semiconductor element formed on a gallium nitride substrate isolated from a sapphire substrate is cleaved. SOLUTION: A nitride semiconductor is laminated on a GaN substrate 1, a ridge is provided in the nitride semiconductor so as to be parallel with the M plane of the GaN substrate 1 by etching a P-side contact layer 11 and a P-side clad layer 10, the ridge is masked, and etching is carried out in parallel with the ridge so as to make the surface of an N-side buffer layer 2 exposed. A p-electrode 20 is formed on the surface of the ridge, an N electrode 22 is formed on the exposed surface of the N-side buffer layer 2, lastly a P pad electrode 21 is formed on the P electrode 20 through the intermediary of an insulating film 30, and an N pad electrode 23 is formed on the N electrode 22 through, the intermediary of the insulating film 30, whereby a wafer can be obtained. The wafer is cleaved at a plane A to make it serve as a resonance plane, a multilayered dielectric film composed of SiO2 and TiO2 is formed on both or either of the resonance planes, and a bar is cut in parallel with the ridge into laser chips. |
