ACTIVE MATRIX SUBSTRATE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To restrain a switching device from deteriorating in characteristics by a method wherein a first conductive material used for a gate wiring is not formed in a gate electrode region, and a gate electrode is formed of second conductive material whose surface morphology is smaller than that of the first conductive material. SOLUTION: A conductive thin film of Ta metal material is formed on the surface of an insulating substrate 1 of glass or the like and shaped into a conductive electrode 2 by patterning. A conductive thin film of Al metal material is formed and shaped into a gate wiring 3 by patterning. The gate wiring 3 formed of Al that is low in resistance and large in surface morphology is low in resistance, and the gate electrode 2 is not formed of Al of large surface morphology but formed of Ta of small surface morphology. By this setup, a switching device is hardly affected by the surface configuration of a gate wiring material and prevented from deteriorating in characteristics.