| 摘要 |
PROBLEM TO BE SOLVED: To produce a semiconductor substrate having a single crystal silicon layer in which defect, e.g. COP, caused by CZ bulk wafer is eliminated or suppressed drastically. SOLUTION: The method for producing an SOI substrate comprises a step for preparing an Si basic body 21 produced by floating zone(FZ) method, a step for forming an ion implantation layer 24 in the Si basic body 21 by implanting oxygen ions from the surface side thereof, and a step for forming a buried Si oxide layer 25 beneath a single crystal Si layer on the surface side by heat treating the Si basic body. |
