| 摘要 |
PROBLEM TO BE SOLVED: To enable an H bridge circuit to be effectively used over the wide range of power voltage. SOLUTION: An NMOS field-effect transistor Q1 and a PMOS field-effect transistor Q2 are connected in parallel and a first parallel circuit formed of them is connected to an NMOS transistor Q3 in series. An NMOS field-effect transistor Q4 is connected to a PMOS field-effect transistor Q5 in parallel. A second parallel circuit formed of them is connected to an NMOS transistor Q6 in series. The first parallel circuit is connected to the series circuit by the transistor Q3 in parallel and the second parallel circuit to the series circuit by the transistor Q6. One end is connected to power voltage VM and the other end to GND. Output terminals for load connection T1 and T2 are connected to the common connection point of the first parallel circuit and the transistor Q3 and the common connection point of the second parallel circuit and the transistor Q6. |
