| 摘要 |
PROBLEM TO BE SOLVED: To enable controlling the heating quantity of a wafer to be constant and reduce irregularity of dimension of resist patterns. SOLUTION: In heating apparatus which is used for heat-treating a wafer before or after exposure on which wafer resist is spread, a heat plate 408 mounting and heating a wafer 407, a light intensity detecting apparatus 404 which casts a light 402 on the wafer 407 and detects the intensity of a reflected light from a resist 406 on the wafer 407, and a control part controlling the heating with the heat plate 408 on the basis of detected intensity of the reflected light are installed, and heating quantities are made uniform to a plurality of wafers. |
