| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask which suppresses the variation in the light intensity of transmitted light from all apertures and improve the uniformity of the sizes of transfer patterns by covering the side walls of the recessed parts of a photomask formed with the recessed parts as phase shift regions within a transparent substrate with light shielding films. SOLUTION: The side walls of the recessed parts 11 within the transparent substrate are A are covered with the light shielding film 4a (a). As a result, the transmitted light entering diagonally from the side walls of the recessed parts 11 is shielded by the light shielding films 4a of the side walls (b). Then, the light intensity distribution on a wafer is such that the light intensity distribution A of the transmitted light of the recessed parts 11 is equal to the light intensity distribution B of the transmitted light in the adjacent apertures (d). Consequently, the uniform sizes of the transfer patterns may be obtd. on the wafer and the improvement in dimensional accuracy may be obtd. even with the shift mask formed with the recessed parts 11 within the transparent substrate 1. The mass production yield of an LSI chip may, therefore, be considerably improved.</p> |
