SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which is manufactured by a manufacturing method and its manufacturing apparatus for an improved semiconductor device. SOLUTION: A lower-layer interconnection 12 is formed inside a recessed part which is formed on a first insulating film 11 formed on a semiconductor substrate. At least one layer of a thin film is formed on at least one layer of a conductive layer which is formed on the semiconductor substrate, in such a way that the lower-layer interconnection 12 is covered. The thin film is patterned so as to form a hard mask. While the hard mask is used as an etching mask, the conductive layer is etched. A conductive pillar-shaped structure 14 whose surface is covered with the hard mask is formed on the lower-layer interconnection 12. A second insulating film is formed on the semiconductor substrate in such a way that the pillar-shaped structure 14 is buried. A wiring groove in which at least the hard mask is exposed is formed. The hard mask is removed. A conductor is then buried in the wiring groove. An upper-layer interconnection is formed on the wiring groove.