| 摘要 |
PROBLEM TO BE SOLVED: To implement etching with high selectivity even if an additive gas is not mixed with a processing gas. SOLUTION: In an etching processing apparatus having an upper electrode 21 and a susceptor 5 serving as a lower electrode within an evacuatable processing chamber 2, at least part of the electrode 21 is made of SiO2. When a processing chamber containing C and F is introduced into the chamber 2, CO is generated, thereby providing a carbon-rich protective film over a substrate surface. As a result, an etching process with respect to a silicon substrate of a wafer W by a fluorine radical is stopped, thereby improving the selection ratio. |
