发明名称 Reference voltage generators including first and second transistors of same conductivity type
摘要 Reference voltage generators can be made relatively insensitive to variations in threshold voltages due to device fabrication processes by providing first and second transistors of the same conductivity type that are connected to one another and between first and second power supply voltages, such that the first transistor operates below the threshold voltage thereof and the second transistor operates above the threshold voltage thereof. The first transistor includes a gate that is coupled to a first node connected to a first power supply voltage and that is connected between an output reference voltage terminal and a second node that is connected to a second power supply voltage. The second transistor includes a gate that is coupled to the second node and is connected between the first node and the second power supply voltage.
申请公布号 US6040735(A) 申请公布日期 2000.03.21
申请号 US19970927606 申请日期 1997.09.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JONG-MIN;JUNG, TAE-SUNG
分类号 G11C11/413;G05F3/24;G11C11/407;H01L21/822;H01L27/04;H03K19/00;(IPC1-7):G05F1/10 主分类号 G11C11/413
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