| 摘要 |
A semiconductor integrated circuit integrating a high-permittivity thin film capacitor of strontium titanate on the same semiconductor chip, the thin film capacitor consisting of a pair of electrodes and essentially crystalline strontium titanate film therebetween which has a thin surface layer where concentration of titanium is higher than that of the rest of the crystalline strontium titanate film. In one embodiment according to the present invention, a thin film capacitor was fabricated by depositing a 200 nm thick film of strontium titanate at a temperature of 300 DEG C. on a 10 nm thick amorphous titanium oxide film which eventually became the thin surface layer, and subsequent annealing of 250 DEG C. for 30 min in an oxidation atmosphere. A structure and processes realized a thin film capacitor having a dielectric constant of 100 and leakage current density of 4x10-7 A/cm2 without degrading characteristics of transistors already fabricated in the same semiconductor chip.
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