发明名称 |
Measurement marks for e-beam projection mask and method of using |
摘要 |
Measurement marks are applied throughout the area of an e-beam projection mask on a grillage of struts extending between sub-field membrane mask areas concurrently with patterning the sub-field membrane mask areas. The thickness of the struts prevents printing of the measurement marks on the resist at the target plane even if inadvertently illuminated by the e-beam system. Measurement of the relative locations of the measurement marks after fabrication and incremental periods of use supports the development of compensation or correction in the electron-optical system for distortions of the mask which may be detected from the measurement marks by adjustment of operating parameters thereof.
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申请公布号 |
US6040095(A) |
申请公布日期 |
2000.03.21 |
申请号 |
US19980163406 |
申请日期 |
1998.09.30 |
申请人 |
NIKON CORPORATION |
发明人 |
ENICHEN, WILLIAM A.;ROBINSON, CHRISTOPHE F. |
分类号 |
H01L21/027;G03F1/14;G03F1/16;H01J37/304;(IPC1-7):G03F9/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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