NITRIDE SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a means by which the optical resonance face of a nitride semiconductor laser element can be manufactured easily with a high yield without giving any adverse influence to the active layer of the element. SOLUTION: In a nitride semiconductor laser element 10 in which at least an n-type nitride semiconductor layer 3, an active layer 4, and a p-type layer 5 are successively laminated upon the upper face of a sapphire substrate 1, a slit groove is discontinuously formed into the sapphire substrate 1 from the nitride semiconductor layer 3 side in the area of a wafer for element, where the active layer 4 is not formed on the extension of an optical resonance face formed in the active layer 4. Then the optical resonance face is formed on the split surfaces of the active layer 4 by splitting the wafer along the split groove.