| 摘要 |
PROBLEM TO BE SOLVED: To necessitate only one transistor, not two, for one memory and thereby increase the degree of integration and to build up a memory in such a structure that current may not be necessary when high voltage is applied so that high voltage can be supplied by a small step-up circuit. SOLUTION: A channel region between the source region 2 and the drain region is constituted of a first channel region controlled by the gate electrode 10 and a second channel region controlled by the floating gate electrode 6. A film formed on the second channel region and the drain region is a thin tunnel insulation film. Due to this structure, such a semiconductor non-volatile memory can be obtained that highly efficient injection of charge and write of data from between the first and the second channel region can be made possible and the tunnel current into the drain region through the tunnel insulation film can be electrically removed.
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