| 摘要 |
PROBLEM TO BE SOLVED: To provide a write and erase method of a semiconductor memory which is free from lowering of write speed, enables single power supply and deteriorates less by repeated rewriting. SOLUTION: While electrons are stored in a floating gate electrode 5 by Fowler-Nordheim tunneling effect by applying a positive voltage to a control gate electrode 7 and applying a voltage which is lower than the positive voltage to a semiconductor board 1, a ground voltage or a negative voltage is applied to the control gate electrode 7 and a voltage which is higher than the voltage applied to the control gate electrode 7 to the semiconductor board 1. As a result, electrons stored in the floating gate electrode 5 are removed by a similar phenomenon.
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