| 摘要 |
PROBLEM TO BE SOLVED: To have to scrap memory cells as defective chips since a memory cell A group and a memory cell B group become perfectly defective in the case of unrelievable even by a redundant circuit relieving a bit in a sector defect of a bit defect, etc. SOLUTION: A masklike change fixing the highest order address TA17 inputted through an address buffer 103 and a product switch circuit 105 to a high level is performed by a logic circuit, and even when the defective sector exists in the memory cell groups 101, 102, one side of two memory cell groups 101, 102 is used mainly, and a decoder circuit is switched so as to allocate a normal sector in the unused memory cell groups with signal control. Thus, this semiconductor storage device is manufacture easily, and the number of the products being scrapped as the defective products is reduced.
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