| 摘要 |
PROBLEM TO BE SOLVED: To prevent current flow between an electrode end on an insulation film and a conductive layer having potential difference such as EQR (Equipotential Ring) and the like with regard to semiconductor elements such as a high withstand-voltage diode and the like. SOLUTION: A P-type diffusion region 3 is formed in an N-type substrate 2 connected to a cathode electrode 1, and the first conductive layer 5 connected to an anode electrode 4 is formed on the P-type diffusion region 3. The first conductive layer 5 and the second conductive layer 7 to be an insulated EQR are formed through a surface insulation film 6. The convexly formed upper edge section 5b of an outer circumference side end 5a of the first conductive layer 5 and the convexly formed upper edge section 7b of an inner circumference side end 7a of the second conductive layer 7 enable prevention of current flow between the first conductive layer 5 and the second conductive layer 7 in relaxing electric field concentration. |
