| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor excellent in characteristic and reliability. SOLUTION: A semiconductor device comprises an insulation gate type field effect transistor formed on one surface of a glass substrate and an insulation film 102 comprising nitrogen, oxygen, and aluminum formed on the other surface of the glass substrate. The insulation gate type field effect transistor has a channel forming region having a crystallinity and a gate electrode 106 formed on the channel forming region through a gate insulation film 105.
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