发明名称 |
Semiconductor memory device, method of laying out semiconductor memory device, method of driving semiconductor pattern of semiconductor device |
摘要 |
A semiconductor memory device adapted to enhanced functional features and a large memory capacity. The semiconductor memory device includes a semiconductor chip divided into 9 regions B1 through B9 having an identical area, in a 3x3 pattern. A main control block is arranged at least in a central region B9 and memory blocks are arranged respectively in the peripheral regions B1 through B8 of the 9 regions. Each of the memory blocks is controlled by the main control block and includes a data input/output circuit and a memory control circuit. |
申请公布号 |
US6041013(A) |
申请公布日期 |
2000.03.21 |
申请号 |
US19990289964 |
申请日期 |
1999.04.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOHNO, FUMIHIRO |
分类号 |
G11C11/401;G11C5/02;G11C8/12;H01L21/8242;H01L23/50;H01L27/108;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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