发明名称 GATE DRIVE CIRCUIT IN POWER CONVERTER
摘要 PROBLEM TO BE SOLVED: To reduce the voltage rating of a device by suppressing switching loss and switching time increase and eliminating the need for a snubber circuit. SOLUTION: When, for example, the voltage between the gate and emitter of an IGBT that is a voltage drive type element is monitored by a comparator CMP 1 and reaches a setting value VGE or less, a gate condition control signal is outputted for a certain amount of time after a fixed amount of time by a delay circuit 2 and a one-shot circuit 3, thus changing the gate drive conditions, extending the turn-off time of the IGBT, and reducing the change rate in a collector current.
申请公布号 JP2000083370(A) 申请公布日期 2000.03.21
申请号 JP19980248712 申请日期 1998.09.02
申请人 FUJI ELECTRIC CO LTD 发明人 TAKIZAWA AKITAKE
分类号 H02M1/08;H03K17/08;H03K17/16 主分类号 H02M1/08
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