发明名称 INLINE TYPE SPUTTERING METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a tendency of the mechanical properties of the obtd. film to directional dependency by arranging a planar body on the space between a target and the substrate carrying face and executing film formation while the oblique incidence along the substrate carrying direction of the sputtering particles from the target is prevented. SOLUTION: A target 1 is sputtered by plasma, the formed sputtering particles 3 are introduced into the surface of a substrate 4 in the process of carrying in the direction of the arrow 6 via a carrying roll 5, and a film is formed thereon. In this inline type sputtering method, the space between the target 1 and the substrate carrying face is provided with a planar body 2 for preventing the oblique incidence along the substrate carrying direction 6 of the sputtering particles 3 from the target 1. As to this planar body 2, preferably, the intervals are controlled to a degree of at least the trisection of the length in the longitudinal direction of the target 1, the length is controlled to about 1/2 of the distance between the target 1 and the substrate carrying face, the material is composed of metal, and water cooling is possible according to need.
申请公布号 JP2000080472(A) 申请公布日期 2000.03.21
申请号 JP19980246107 申请日期 1998.08.31
申请人 ASAHI GLASS CO LTD 发明人 SUZUKI SUSUMU
分类号 C23C14/34;C23C14/56;(IPC1-7):C23C14/56 主分类号 C23C14/34
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