| 摘要 |
PROBLEM TO BE SOLVED: To remarkably improve the characteristics and reliability of a gate insulation film by thermally annealing an island-shaped crystalline silicon film on a substrate, forming a silicon oxide film on the surface, covering the silicon oxide film, and forming an insulation film as the gate insulation film. SOLUTION: A ground film 602 (silicon oxide) and an amorphous silicon film 603 are formed on a substrate, and a silicon oxide film is formed on the surface of the amorphous silicon film 603 by thermal oxidation or treatment using an oxidizer such as hydrogen peroxide water. In this state, an extremely thin acetic acid nickel layer 604 is formed by the spin-coating method, the substrate is annealed in an nitrogen atmosphere, and the amorphous silicon film 603 is crystallized. Then, the silicon film is etched to obtain an island- shaped silicon region 605. Then, the substrate is placed in an oxygen atmosphere, and a KrF excimer laser beam is applied, thus obtaining a silicon oxide film 606. Then, a silicon oxide film 607 is formed as a gate insulation film by the plasma CVD method.
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