| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory circuit not injuring wiring life even when an unallocated read-out address not physically existing is inputted. SOLUTION: When the unallocated read-out address, e.g. n+1 is inputted to a read-out address terminal 6, all outputs RAD0-RADn of a read-out address decoder circuit 7 are changed to a logic value '0', a read-out data line 14 is changed to a high impedance state, and the output of a 0 detection circuit 11 from the logic value '1' to '0'. According to this, an N channel type MOSFET 17 in a sense amplifier circuit 12 becomes an off state from an on state, and a P channel type MOSFET 18 becomes the on state from the off state, and even when FETs 15, 16 become a floating state, a penetration current from a positive source VDD to a negative source VSS doesn't flow.
|
