发明名称 SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To achieve improved controllability, productivity, and uniformity by forming a non-porous monocrystalline layer on the porous silicon layer of a first substrate after heat treatment in an oxygen atmosphere, laminating a second substrate to the side of the nonporous monocrystalline layer, then eliminating the first substrate, and performing heat treatment in a reducing atmosphere. SOLUTION: After a first substrate 11 with a porous silicon layer 15 is heat- treated in an oxygen atmosphere, a non-porous monocrystalline layer 12 is formed on the porous silicon layer 15. Then, a multilayer structure body is obtained, where the first substrate 12 and a second substrate 13 are laminated via an insulation layer and with the non-porous monocrystalline layer 12 inside. After that, the first substrate 11 (including the porous silicon layer 15) is eliminated from the multilayer structure body. Then, the non-porous monocrystalline layer 12 that is transferred onto the second substrate 13 via the insulation layer is heat-treated in a reducing atmosphere containing hydrogen and at a temperature of the melt point or less of the non-porous monocrystalline layer, thus achieving improved controllability, productivity, and uniformity.
申请公布号 JP2000082643(A) 申请公布日期 2000.03.21
申请号 JP19990217222 申请日期 1999.07.30
申请人 CANON INC 发明人 SATO NOBUHIKO;YONEHARA TAKAO
分类号 H01L21/76;H01L21/02;H01L21/304;H01L21/306;H01L27/12;(IPC1-7):H01L21/02 主分类号 H01L21/76
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