发明名称 |
N-type window layer for a thin film solar cell and method of making |
摘要 |
Transparent conductive ZnO films are formed at a high rate, are equal in performance to those formed by MOCVD and have a large area, while the influence of sputtering bombardment is reduced. A method for producing transparent conductive ZnO films is used to produce the window layer of a CIGS thin-film solar cell. A first conductive film functioning as an interface-protective film is formed on a high-resistance-buffer (interfacial) layer by low-output (100 W or lower) RF sputtering using a ZnO target while reducing sputtering bombardment. Second and third conductive films for the window layer are then formed by DC magnetron sputtering in steps using a ZnO-Al target in each step.
|
申请公布号 |
US6040521(A) |
申请公布日期 |
2000.03.21 |
申请号 |
US19970854092 |
申请日期 |
1997.05.09 |
申请人 |
SHOWA SHELL SEKIYU K.K. |
发明人 |
KUSHIYA, KATSUMI;OKUMURA, DAISUKE;SUGIYAMA, ICHIRO |
分类号 |
C23C14/35;C23C14/40;H01L31/0224;H01L31/0336;H01L31/04;H01L31/18;(IPC1-7):H01L31/032;H01L31/027 |
主分类号 |
C23C14/35 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|